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Beschreibung
The book has been written with the intention to satisfy the needs of the researchers and students devoted to the study of electron transport properties in the material GaN. An up-to-date account of the theoretical research results as done by the authors has been incorporated in the book. It is the strong belief of the authors that the present book will be useful to all the electronic device physicists and engineers interested in the transport characteristics and applications of GaN and thus will pave the path for future research in this field.
Boltzmann transport equation (BTE), High field transport theory, Velocity Overshoot, Monte-carlo simulation
Details
| Verlag | LAP LAMBERT Academic Publishing |
| Ersterscheinung | 09. Februar 2013 |
| Maße | 22 cm x 15 cm x 0.7 cm |
| Gewicht | 167 Gramm |
| Format | Softcover |
| ISBN-13 | 9783659338502 |
| Seiten | 100 |
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