Studies on Vanadium based Schottky Contacts to n-type Indium Phosphide

Studies on Vanadium based Schottky Contacts to n-type Indium Phosphide

von S. Sankar Naik, V. Rajagopal Reddy
Taschenbuch - 9783659378638
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Beschreibung

Indium phosphide (InP) with a direct band gap of 1.35 eV is a promising material for photovoltaic solar energy conversion. The high radiation resistance and potentially high efficiency make InP solar cells excellent candidates for eventually using in space. InP and its related compounds have found potential applications in the design of high speed devices such as field effect transistors and high electron mobility transistor (FET, HEMT), charge coupled devices, solar and integrated optoelectronic devices such as radiation detectors and chemical sensors. InP schottky diodes are of special interest because of its special properties such as large mobility required for high speed devices, optimum bandgap for photovoltaic conversion and radiation resistance for solar cells.

Details

Verlag LAP Lambert Academic Publishing
Ersterscheinung Mai 2013
Maße 220 mm x 150 mm x 10 mm
Gewicht 261 Gramm
Format Taschenbuch
ISBN-13 9783659378638
Auflage Nicht bekannt
Seiten 164

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