Studies on Schottky Electrodes to n-type Indium Phosphide

Metal-Semiconductor contacts play an important role in the fabrication of devices based on the III-V group compound semiconductors in the form of Schottky electrodes. Schottky barrier contacts based on n-InP are of considerable interest on account of their potential applications in solar cells, microwave field effect transistors, and high speed devices etc. The choice of InP as a substrate for these devices stems from the fact that it has an optimum band gap for photo-voltaic energy conversion and a large mobility required for high speed devices. This Book describes the device fabrication and characterization of Pd/Au, Pt/Au and Ni/Au Schottky contacts to n-type InP. It discusses current-voltage, capacitance-voltage, XRD and AFM studies that are carried out in the present work. It presents the influence of rapid thermal annealing on the electrical and structural properties of Pd/Au, Pt/Au and Ni/Au to n-InP (111). The results presented in the book will be useful for those working in the field of fabrication of Schottky contacts on n-type InP