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Beschreibung
This book presents the results of structural studies of InGaN, AlGaN, InAlN, and rare-earth doped (Tm, Er and Eu) GaN by Extended X-ray Absorption Fine Structure; optical characterisation of RE-doped GaN by cathodoluminescence, photoluminescence and photoluminescence excitation spectroscopies. First attempts to identify the lattice location of emitting centres in nitride semiconductors using X-ray Excited Optical Luminescence for EXAFS detection are also presented.
This book presents the results of structural and spectroscopic studies of luminescent nitride semiconductors
Details
| Verlag | LAP LAMBERT Academic Publishing |
| Ersterscheinung | 13. September 2010 |
| Maße | 22 cm x 15 cm x 1.2 cm |
| Gewicht | 280 Gramm |
| Format | Softcover |
| ISBN-13 | 9783838323336 |
| Seiten | 176 |
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