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Beschreibung
This book gives an idea of modifications in fabrication steps of 22nm MOS transistor. A 22nm MOS transistor results are compared with a new modification process of stress.Their are two types of stress uniaxial and biaxial stress. Key Features: 1. Concept of Scaling. 2. Basic concept of MOS transistor. 3. Fabication process of 180nm MOS transistor. 4. Modified processes used in fabrication of 22nm MOS transistor.
Simulation of 22nm NMOS Transistor
Details
| Verlag | LAP LAMBERT Academic Publishing |
| Ersterscheinung | 06. November 2012 |
| Maße | 22 cm x 15 cm x 0.5 cm |
| Gewicht | 119 Gramm |
| Format | Softcover |
| ISBN-13 | 9783659256202 |
| Seiten | 68 |
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