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Beschreibung
Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
Silicon-Germanium Heterostructure Devices: Basics and Realisations
Details
| Verlag | Springer Berlin |
| Ersterscheinung | Januar 2005 |
| Maße | 23.5 cm x 15.5 cm |
| Gewicht | 735 Gramm |
| Format | Hardcover |
| ISBN-13 | 9783540220503 |
| Auflage | 2005 |
| Seiten | 364 |
Schlagwörter
Condensed Matter Physics, Electronic Circuits and Systems, Electronics and Microelectronics - Instrumentation, Elektronik, Laser, Laserphysik, Nanotechnologie, Nanotechnology, Optical Materials, Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik), Schaltkreise und Komponenten (Bauteile), Technische Anwendung von elektronischen - magnetischen - optischen Materialien
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