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Softcover - 9789811351815
106,99 €
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Beschreibung
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
Details
| Verlag | Springer Singapore |
| Ersterscheinung | 02. November 2017 |
| Maße | 23.5 cm x 15.5 cm |
| Gewicht | 459 Gramm |
| Format | Hardcover |
| ISBN-13 | 9789811046117 |
| Auflage | 1st ed. 2018 |
| Seiten | 168 |
Schlagwörter
Condensed Matter Physics, Electronic Circuits and Devices, Electronic Circuits and Systems, Electronics and Microelectronics - Instrumentation, Elektronik, Elektronische Geräte und Materialien, Optical and Electronic Materials, Optical Materials, Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik), Schaltkreise und Komponenten (Bauteile), Semiconductors, Solid State Physics, Technische Anwendung von elektronischen - magnetischen - optischen Materialien
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