Preparation and characterization of n-CdSe / p-Si Photo detector

In this book contain the material n-cdse/p-si photodetector was fabricated by using a rapid thermal alloying technique. This was achieved when a thin film of deposited on a glass and n or p type mono crystalline silicon .The electrical optical and structural properties of the prepared films studied at different conditions under fixed temperature and at annealing .The spectral response of the photodector shows the absorption lie between ( 650- 950 .The comparison of the samples used to fabricate the at different annealing time ( 15, 35, 45, 60 min) at constant 500 C the results analysis shows the best annealing time was 60 min incident radiate power equal to 0.The crystal structure of the prepared samples was studied by using x-diffraction technique. from the data analysis we notice that domenient phase was n-cdse at annealing time (14min) and temperature .The conversion efficiency of the fabricated photodetector was (17%) at wavelength 650 nm at different illumination condition, the advantage of the best radiate power was The surface morphology of the prepared and annealed specimens.