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Softcover - 9783031842887
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Beschreibung
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy. The book is focused on the extraction of parameters for silicon-based FET models that critically determine the FET performance at room temperature as well as at very low temperatures. Emphasize is put on analysis that is based on the device physics, especially at low (cryogenic) temperatures. Performance of gate-all-around (GAA) nanowire FETs, and stacked nanosheet complementary FETs (C-FET) are also discussed.
Physics Based Perspectives and Attributes
Physics Based Perspectives and Attributes
Details
| Verlag | Springer International Publishing |
| Ersterscheinung | 27. März 2025 |
| Maße | 24 cm x 16.8 cm |
| Gewicht | 472 Gramm |
| Format | Hardcover |
| ISBN-13 | 9783031842856 |
| Seiten | 129 |
Schlagwörter
Angewandte Physik, Applied and Technical Physics, Electrical and Electronic Engineering, Electronic Circuits and Systems, Electronic Devices, Elektrotechnik, Nanoengineering, Nanotechnologie, Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik), Schaltkreise und Komponenten (Bauteile)
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