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Multi-run Memory Tests for Pattern Sensitive Faults

von Ireneusz Mrozek
Softcover - 9783030081980
53,49 €
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Hardcover - 9783319912035
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Weitere Formate

Hardcover - 9783319912035
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Beschreibung

This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory.  The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;Presents practical algorithms for design and implementation of efficient multi-run tests;Demonstrates methods verified by analytical and experimental investigations.

Details

Verlag Springer International Publishing
Ersterscheinung 01. Februar 2019
Maße 23.5 cm x 15.5 cm
Gewicht 236 Gramm
Format Softcover
ISBN-13 9783030081980
Auflage Softcover reprint of the original 1st ed. 2019
Seiten 135

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