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Beschreibung
The world of solid state device in semiconductor industries is achieving significant advancement in the recent years and is rapidly changing with the introduction of devices fabricated using semiconductor alloys. III¿V compound semiconductor alloys are promising choice for channel material of future post-Si CMOS logic transistors. In the quest to map the potential of III-V compound semiconductor alloys for future CMOS applications, the High Electron Mobility Transistor (HEMT) has emerged as a valuable model system to understand fundamental physical and technological aspects of the device.
Hemts for High Frequency and High Power Applications
Details
| Verlag | LAP LAMBERT Academic Publishing |
| Ersterscheinung | 15. Februar 2020 |
| Maße | 22 cm x 15 cm x 0.9 cm |
| Gewicht | 215 Gramm |
| Format | Softcover |
| ISBN-13 | 9786200585318 |
| Seiten | 132 |
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