✍️ 🧑‍🦱 💚 Autor:innen verdienen bei uns doppelt. Dank euch haben sie so schon 418.243 € mehr verdient. → Mehr erfahren 💪 📚 🙏

Microstructure and Optoelectronics Characterizations of GaxSb1-x/GaAs

Microstructure and Optoelectronics Characterizations of GaxSb1-x/GaAs

von Ali Jalaukhan, Hussein Al-Lamy und Maysoon Alias
Softcover - 9783659716645
61,90 €
  • Versandkostenfrei
Auf meine Merkliste
  • Hinweis: Print on Demand. Lieferbar in 2 Tagen.
  • Lieferzeit nach Versand: ca. 1-2 Tage
  • inkl. MwSt. & Versandkosten (innerhalb Deutschlands)

Autorenfreundlich Bücher kaufen?!

Beschreibung

Developments of narrow gap semiconductor physics have been closely related to the development of the science and technology of infrared optical electronics in which narrow gap semiconductors have played a vital role in detectors and emitters, and other high speed devices. Antimony-based technology is very promising for low voltage millimeter-wave (mm-wave) integrated circuits (ICs), as well as very highspeed, low-power digital ICs. Among the many potential applications are digitally beam-steered phased array receivers, particularly those deployed in space; 80¿160 Gbit/s optical communication systems; unmanned reconnaissance vehicles; and mobile, battery-powered systems.

Details

Verlag LAP LAMBERT Academic Publishing
Ersterscheinung 06. August 2015
Maße 22 cm x 15 cm x 0.9 cm
Gewicht 227 Gramm
Format Softcover
ISBN-13 9783659716645
Seiten 140