Kristallinität und Fehlordnung: Charakterisierung und technologische Bedeutung

7) Kryszewski, M. and A. Szymanski, Macromol. Rev. 4D, 183 (1970). The density and the energetic situation of local­ 8) Bassler, H., Kunststoffe 62, 115 (1972). i;::ed levels at the polymer surface and bulk and their 9) Rose, A., Helv. Phys. Acta 29, 199 (1956). occupancy probability of excess electrons or defect­ 10) Many, A., Y. Goldstein and N. B. Grover electrons determine the electrostatic charging of Semiconductor Surfaces, 139 (Amsterdam 1971): polymer solids associated with the contact of met­ 11) Many, A., N. B. Grover, Y. Goldstein and E. als. Accumulation layers of excesselectrons and de­ Harnik, ]. Phys. Chern. Solids 14, ]D 5, 298 (1960). pletion layers of defectelectrons can exist near the 12) Many, A., Y. Goldstein and N. B. Grover polymer surface depending on the electrical potential Semiconductor Surfaces, 185 (Amsterdam 1971): of the contacting metal. These layers are caused by 13) Ryvktn, S. M., Photoelectric Effects in Semi­ the difference between the physical states of the poly­ conductors, 252 (New York 1964). mer surface and bulk. The energetic situation of the 14) Cholvdry, A. and C. R. Westgate, ]. Phys. D: localized levels is determined by intermolecular inter­ Appl. Phys. 7, 713 (1974). actions and therefore it depends on the state of 15) Many, A., Y. Goldstein and N. B. Grover, order of the surface and the bulk. Semiconductor Surfaces, 136 (Amsterdam 1971).