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Beschreibung
The cubic Siliconcarbide (3C-SiC) polytype is one of over 200 different ways to crystallize the wide bandgap semiconductor SiC. For further research and industrial applications only four different types are relevant: 4H, 6H (hexagonal), 15R (rhombohedral) and 3C (cubic). With the lowest bandgap the 3C-SiC type leads to a variety of electronical applications like MOSFETs and IBSCs. This work presents the fundamentals of intermediate band gap solar cells and describes a way of growth and doping 3C-SiC crystals using the fast sublimation growth process in a physical vapor transport setup.
A presentation of fundamentals considering the growth and doping of cubic Siliconcarbide
Details
| Verlag | AV Akademikerverlag |
| Ersterscheinung | 15. Januar 2016 |
| Maße | 22 cm x 15 cm x 0.6 cm |
| Gewicht | 149 Gramm |
| Format | Softcover |
| ISBN-13 | 9783639843538 |
| Seiten | 88 |
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