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Gettering Defects in Semiconductors

Gettering Defects in Semiconductors

von Victor A. Perevostchikov und Vladimir D. Skoupov
übersetzt von Victor Gloumov
Softcover - 9783642065705
160,49 €
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Beschreibung

Gettering Defects in Semiconductors fulfills three basic purposes:

– to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics;

– to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists;

– to fill a gap in the contemporary literature on the underlying semiconductor-material theory.

The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.

Details

Verlag Springer Berlin
Ersterscheinung 21. Oktober 2010
Maße 23.5 cm x 15.5 cm
Gewicht 610 Gramm
Format Softcover
ISBN-13 9783642065705
Auflage Softcover reprint of hardcover 1st edition 2005
Seiten 388

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