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Hardcover - 9780387717517
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Beschreibung
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
Details
| Verlag | Springer US |
| Ersterscheinung | 25. November 2010 |
| Maße | 23.5 cm x 15.5 cm |
| Gewicht | 545 Gramm |
| Format | Softcover |
| ISBN-13 | 9781441944092 |
| Auflage | Softcover reprint of hardcover 1st ed. 2008 |
| Seiten | 340 |
Schlagwörter
Circuits and Systems, Electrical and Electronic Engineering, Electrical Engineering, Electronic Circuits and Systems, Electronics and Microelectronics - Instrumentation, Elektronik, Elektrotechnik, Engineering - general, Ingenieurswesen - Maschinenbau allgemein, Schaltkreise und Komponenten (Bauteile), Technology and Engineering
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