Europium monoxide for spintronics

The principles of semiconductor spintronic devices are discussed. The models of the implementation of the spin current transfer in contacts ferromagnetic semiconductors and non-magnetic wide bandgap semiconductors to one of the electronic Zeeman levels in the band gap energies of a non-magnetic semiconductor.The results of experimental studies of such structures, including structures with composite based monoxide europium, indicating the possibility of creating on their basis of solid spintronic devices for millimeter and submillimeter spectroscopy of solids, as well as elements of quantum spin of computer devices capable of operating at room temperatures. For researchers and professionals involved in the development of semiconductor spin electronics devices and informatics, and the creation of spin memory devices for quantum computer.