Estimation of Lattice Strain by X¿Ray Analysis

Wider Bandgap in II¿VI semiconductor nanoparticles is important and advantageous for various potential applications including visible light photöcatalysis. Due to the presence of polycrystalline aggregates the crystallite size of the particles is not generally the same as the particle size. Lattice strain is a measure of the distribution of lattice constants arising from crystal imperfections (lattice dislocation), triple junction, contact or sinter stresses, stacking faults, coherency stresses, etc. X¿Ray Diffraction (XRD) analysis is powerful technique to estimate the crystallite size and lattice strain. In this present work, a comparative evaluation of the mean particle size of Ni doped CdS nanoparticles with different molar concentrations obtained from XRD broadening reported.