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Beschreibung
The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
An Introduction to Atomic-Level Silicon Engineering
Details
| Verlag | Springer Tokyo |
| Ersterscheinung | 31. März 2016 |
| Maße | 23.5 cm x 15.5 cm |
| Gewicht | 848 Gramm |
| Format | Softcover |
| ISBN-13 | 9784431557999 |
| Auflage | 1st ed. 2015 |
| Seiten | 487 |