CIGS Absorber Layer for Solar Cell

CIGS absorber layer was synthesized as solution and powder using of compounds Cu (NO3)3.H2O, InCl3, Ga(NO3)3.6H2O and H2SeO3. The first stage of preparing CIGS ink was to prepare liquid and powder of Gallium nitrate hydrate Ga(NO3)3.6H2O , FTIR analysis was used to identify the chemical structure of Gallium nitrate hydrate and CIGS ink.The ink solution was diluted to different concentrations (12.5, 25, 50 and 100) %. This solution was prepared as powder using different temperatures (200, 350 ,450,500 and 525)oC ,measurements was carried out to investigate the properties of this powder characterized by FTIR, photo images. The composition of elements of CIGS was studied using EDX, structural analysis was studied using XRD, while the surface analysis was studied using AFM. DSC, DTA was used to study thermal analysis, using XRD to study the effect of annealing temperature on structural analysis.Electrodeposition method was used to deposite the CIGS ink on various flexible metal substrates like (Stainless Steel (SS), Copper (Cu),Molybdenum (Mo) and Titanium (Ti) sheets .SEM used to study the morphology of CIGS films. Electrical properties of CIGS films on metal substrates were studied.