Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion

von Edmund G. Seebauer, Meredith C. Kratzer
Taschenbuch - 9781849968201
199,98 €
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Hardcover - 9781848820586
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Beschreibung

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of "defect engineering". For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Details

Verlag Springer London
Ersterscheinung Oktober 2010
Maße 235 mm x 155 mm x 16 mm
Gewicht 468 Gramm
Format Taschenbuch
ISBN-13 9781849968201
Auflage Softcover reprint of hardcover 1st ed. 2009
Seiten 308

Schlagwörter