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Charge Transport in Low Dimensional Semiconductor Structures

von Giovanni Mascali, Vito Dario Camiola und Vittorio Romano
Softcover - 9783030359959
106,99 €
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Hardcover - 9783030359928
106,99 €

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Weitere Formate

Hardcover - 9783030359928
106,99 €

Beschreibung

This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schrödinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.

The Maximum Entropy Approach

The Maximum Entropy Approach

Details

Verlag Springer International Publishing
Ersterscheinung März 2021
Maße 23.5 cm x 15.5 cm
Gewicht 540 Gramm
Format Softcover
ISBN-13 9783030359959
Auflage 1st ed. 2020
Seiten 337