Weitere Formate
Softcover - 9783642266881
106,99 €
Autorenfreundlich Bücher kaufen?!
Beschreibung
This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.
Mobile Ions Effects on the Oxide Properties
Mobile Ions Effects on the Oxide Properties
Details
| Verlag | Springer Berlin |
| Ersterscheinung | 16. Januar 2011 |
| Maße | 23.5 cm x 15.5 cm |
| Gewicht | 376 Gramm |
| Format | Hardcover |
| ISBN-13 | 9783642163036 |
| Auflage | 2011 |
| Seiten | 106 |
Schlagwörter
Characterization and Analytical Technique, Condensed Matter Physics, Elektronische Geräte und Materialien, Optical Materials, Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik), Semiconductors, Technische Anwendung von elektronischen - magnetischen - optischen Materialien, Werkstoffprüfung
Herstellerinformationen
Bekannt durch
