Weitere Formate
Softcover - 9783662570265
53,49 €
Autorenfreundlich Bücher kaufen?!
Beschreibung
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
Details
| Verlag | Springer Berlin |
| Ersterscheinung | 22. Juni 2016 |
| Maße | 23.5 cm x 15.5 cm |
| Gewicht | 310 Gramm |
| Format | Hardcover |
| ISBN-13 | 9783662496817 |
| Auflage | 1st ed. 2016 |
| Seiten | 59 |
Schlagwörter
Herstellerinformationen
Bekannt durch
