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Stability of IGZO-based Thin-Film Transistor

Stability of IGZO-based Thin-Film Transistor

von John Wager und Ken Hoshino
Softcover - 9783838399638
59,00 €
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Beschreibung

Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this book is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO- based TFTs processed at temperatures between 200 °C and 300 °C.

Stability and Temperature-Dependence Assessment of IGZO TFTs

Details

Verlag LAP LAMBERT Academic Publishing
Ersterscheinung 07. September 2010
Maße 22 cm x 15 cm x 1 cm
Gewicht 244 Gramm
Format Softcover
ISBN-13 9783838399638
Seiten 152

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