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Beschreibung
This book "ANALYSIS OF CERTAIN SCATTERING EFFECTS IN SI NANOWIRE TRANSISTORS" derives the analytical drain current models for certain Scattered Silicon Nanowire MOSFET. Scattered Silicon Nanowire MOSFET is revealed which includes the effects of elastic scattering, optical phonon emission, surface roughness scattering, Discrete Random dopants and Temperature effects. These analytical models are validated by comparing their results with TCAD simulations.
A Future Device Modelling
Details
| Verlag | LAP LAMBERT Academic Publishing |
| Ersterscheinung | 15. Dezember 2019 |
| Maße | 22 cm x 15 cm x 1.2 cm |
| Gewicht | 292 Gramm |
| Format | Softcover |
| ISBN-13 | 9786200483584 |
| Seiten | 184 |
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