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Beschreibung
Measurements of thallium and indium doped Silicon-On-Insulator rib waveguides show optical absorption at a wavelength of 1550nm, dependent on the charge state of the associated deep-level. Therefore, it is possible to use this effect to modulate waveguide transmission by means deep-level occupancy change induce by local depletion and/or injection of free-carriers. A one-dimensional model based on the generation and recombination process described by the modified Shockley-Read-Hall (SRH) mechanism was developed using MATLAB programming language in order to compute the optical absorption of a 1550nm wavelength as a function of the density of neutrally-charged thallium or indium centers. In addition, the influence of indium, as a dopant in silicon (utilizing the Impurity Photovoltaic Effect), as a means to increase the efficiency of a thin film silicon solar cell was investigated using the same samples.
by Controlling the Charge State of Deep Impurity Levels in Silicon
Details
| Verlag | LAP LAMBERT Academic Publishing |
| Ersterscheinung | 03. Februar 2012 |
| Maße | 22 cm x 15 cm x 1.3 cm |
| Gewicht | 322 Gramm |
| Format | Softcover |
| ISBN-13 | 9783846586723 |
| Seiten | 204 |