Microwave Effect on Nitride Semiconductors at High Temperature

The project of this work is to study the microwave effect on Nitride ceramics at high temperature. Three samples of nitrides are used for this studying. Aluminum nitride, AlN, Silicon nitride, SiN, and Boron nitride, BN. A full computerized cavity perturbation technique working in frequency ranges, 615 MHz, 1412 MHz, 2214 MHz, 3018 MHz, and 3820 MHz at a temperature ranging from 25 oC to 2000 oC, are using to measure the microwave dielectric properties of the three samples. The microwave effect on these samples can be determined by noting the variation of the real and the imaginary parts measurements, ¿' and ¿'', of the dielectric properties in microwave frequency range at high temperature. Further clarification will be get by calculated the temperature and frequency-dependent electrical conductivity, ¿, the frequency exponent n, and the activation energy, EA, in the same microwave frequency and temperature ranges.