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Beschreibung
The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant.
For Microelectronic Devices
Details
| Verlag | LAP LAMBERT Academic Publishing |
| Ersterscheinung | 24. Mai 2016 |
| Maße | 22 cm x 15 cm x 1.2 cm |
| Gewicht | 286 Gramm |
| Format | Softcover |
| ISBN-13 | 9783659874819 |
| Seiten | 180 |
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