InAsSbP quantum dot mid-IR photodetectors

The achievements of low cost and size infrared photodetectors have allowed them to become ubiquitous consumer products.The challenges of photodetector technologies with the potential to meet the application requirements in the near future suggest the development of new physical phenomena and novel material system based photodetectors. Quantum confined structures possess a great potential for surpassing the traditional boundaries of bulk semiconductor devices. This book reviews the state-of-the-art infrared photodetectors based on quantum wells and quantum dots as well as dominant material systems used for them. Also, InAs-InSb-InP material system is suggested for fabrication of quantum dot mid-infrared photodetectors. The growth, electrical and optical properties of those photodetectors are presented. The obtained results open up new prospects, especially, for photodetectors operating at room temperature.