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Beschreibung
I would like to give you an outstanding opportunity to experience more about modern materials for Dynamic Random Access Memories. Therefore I give this book into your hands. You will find here a theory chapter focusing on DRAM physics as well as a deep description of deposition and characterization methods used in this work. Finally, you will discover how to engineer materials on an atomic scale and how to investigate those thin films.
Atomic scale engineering of HfO2-based dielectrics for future DRAM applications
Details
| Verlag | Südwestdeutscher Verlag für Hochschulschriften |
| Ersterscheinung | 23. Dezember 2011 |
| Maße | 22 cm x 15 cm x 0.8 cm |
| Gewicht | 185 Gramm |
| Format | Softcover |
| ISBN-13 | 9783838130187 |
| Seiten | 112 |
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