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Beschreibung
Silicon carbide is the only WBG semiconductor that possesses a high-quality native oxide suitable for use as an MOS insulator in electronic devices. Thermal oxidation of SiC produces a layer of SiO2 on the surface, while the carbon atoms from the SiC form CO, which escapes as a gas. Thus it is possible to make all the devices found in silicon IC technology in SiC, including high quality, stable MOS transistors and MOS integrated circuits.
Details
| Verlag | LAP LAMBERT Academic Publishing |
| Ersterscheinung | 04. September 2020 |
| Maße | 22 cm x 15 cm x 0.5 cm |
| Gewicht | 119 Gramm |
| Format | Softcover |
| ISBN-13 | 9786202800891 |
| Seiten | 68 |
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