A Reckoner on the Development of Elementary Semiconductor Devices

This book presents a systematic overview on the development philosophy for elementary semiconductor devices viz. MOS (Metal Oxide Semiconductor) capacitors & Schottky diodes. Thin films form an integral part of any semiconductor device developed till date. Thermally grown oxide films were characterized for thickness evaluation as well as for studying their Current-Voltage behavior for extraction of Breakdown Voltage & Breakdown Field (>1 MV/cm). Fabrication process for MOS devices was formulated for achieving high dielectric strength oxide films. Characterization (Capacitance-Voltage) of MOS capacitors was performed to extract parameters viz. oxide thickness, full depletion capacitance, impurity concentration (resistivity) of semiconductor substrate, etc. The process for fabrication of Schottky diodes was designed for achieving a low forward voltage drop (VFD). Characterization (Current-Voltage) of Schottky device was carried out for extracting electrical parameters viz. Forward voltage drop, Ideality factor (¿), Barrier height (¿Bp) and Saturation current density (Js).