{"product_id":"the-reliability-of-strained-si-mosfets-on-varied-technology-platforms-von-rimoon-agaiby","title":"THE RELIABILITY OF STRAINED SI MOSFETS ON VARIED TECHNOLOGY PLATFORMS","description":"\u003cp\u003eThe reliability of strained Si devices on several  technology platforms has been investigated,  highlighting the advantages and disadvantages in each  case.  The devices had biaxial strain induced through  the use of a SiGe strain relaxed buffer or uniaxial  strain induced through the use of strained nitride  liners or stress memorisation.  Since there is much  literature demonstrating the benefits of using strain  engineering to enhance drive current and speed, the aim  of this thesis has been to present several aspects of  device reliability that have not been studied  previously and to demonstrate the need for  significantly more research.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783838363325\"\u003e\u003ch3\u003eReliability of Advanced Si Technology\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Softcover - 9783838363325","offer_id":39469133627485,"sku":"9783838363325","price":68.0,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/ffc546e6-9708-415d-90ea-b82863874793.jpg?v=1759036483","url":"https:\/\/shop.autorenwelt.de\/products\/the-reliability-of-strained-si-mosfets-on-varied-technology-platforms-von-rimoon-agaiby","provider":"Autorenwelt Shop","version":"1.0","type":"link"}