{"product_id":"subthreshold-surface-potential-model-for-short-channel-mosfet-von-angsuman-sarkar","title":"Subthreshold Surface Potential Model for Short-Channel Mosfet","description":"\u003cp\u003eAs a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783659126093\"\u003e\u003ch3\u003eUsing Pseudo 2d Analysis\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Softcover - 9783659126093","offer_id":39482468696157,"sku":"9783659126093","price":35.9,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/56de4fb8-dd57-41a5-ae25-c65ca16cd665.jpg?v=1770185276","url":"https:\/\/shop.autorenwelt.de\/products\/subthreshold-surface-potential-model-for-short-channel-mosfet-von-angsuman-sarkar","provider":"Autorenwelt Shop","version":"1.0","type":"link"}