{"product_id":"recent-advances-in-pmos-negative-bias-temperature-instability-von-undefined","title":"Recent Advances in PMOS Negative Bias Temperature Instability","description":"This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: \n\n  Ultra-fast      measurements and modelling of parametric drift due to NBTI in different      transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and      GAA-SNS p-FETs, with Silicon and Silicon Germanium channels.    BTI      Analysis Tool (BAT), a comprehensive physics-based framework, to model the      measured time kinetics of parametric drift during and after DC and ACstress, at different stress and recovery biases and temperature, as well      as pulse duty cycle and frequency.    The      Reaction Diffusion (RD) model is used for generated interface traps,      Transient Trap Occupancy Model (TTOM) for charge occupancy of the      generated interface traps and their contribution, Activated Barrier Double      Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate      insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap      generation in the BAT framework; NBTI parametric drift is due to      uncorrelated contributions from the trap generation (interface, bulk) and      trapping processes.    Analysis      and modelling of Nitrogen incorporation into the gate insulator, Germanium      incorporation into the channel, and mechanical stress effects due to      changes in the transistor layout or device dimensions; similarities and      differences of (100) surface dominated planar and GAA MOSFETs and (110)      sidewall dominated FinFETs are analysed.\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9789811661198\"\u003e\u003ch3\u003eCharacterization and Modeling of Device Architecture, Material and Process Impact\u003c\/h3\u003e\u003c\/div\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9789811661228\"\u003e\u003ch3\u003eCharacterization and Modeling of Device Architecture, Material and Process Impact\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Hardcover - 9789811661198","offer_id":39626788044893,"sku":"9789811661198","price":160.49,"currency_code":"EUR","in_stock":true},{"title":"Softcover - 9789811661228","offer_id":40753969659997,"sku":"9789811661228","price":160.49,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/e34123a3-7b51-4375-9d5e-30ef32192be9.jpg?v=1743402716","url":"https:\/\/shop.autorenwelt.de\/products\/recent-advances-in-pmos-negative-bias-temperature-instability-von-undefined","provider":"Autorenwelt Shop","version":"1.0","type":"link"}