{"product_id":"mop-tranzistory-s-dialektrikom-high-k-sposobstwuut-tehnologicheskomu-progressu-von-acharq-puq","title":"MOP-tranzistory s diälektrikom High-K sposobstwuüt tehnologicheskomu progressu","description":"\u003cp\u003eDostizheniq w tehnologii izgotowleniq high-k pozwolili dobit'sq ogromnogo progressa w mikroälektronnoj promyshlennosti, kak za schet uluchsheniq harakteristik otdel'nyh tranzistorow, tak i za schet wozmozhnosti integracii bol'shego kolichestwa tranzistorow w chip. V blizhajshie gody MOP s high-k mogut izmenit' scenarii sozdaniq tranzistorow malogo razmera. Poätomu issledowaniq ätogo ustrojstwa dolzhny prodolzhat'sq s intensiwnymi äxperimentami. Vliqnie wysokokristallicheskogo diälektrika (TiO2) takzhe nablüdaetsq na NMOS-tranzistore. Obnaruzheno, chto podporogowyj tok utechki umen'shaetsq s uwelicheniem porogowogo naprqzheniq; äto snizhaet potreblqemuü moschnost' i, takim obrazom, uluchshaet harakteristiki NMOS-tranzistora. Snizhenie utechki na zatwore i podporogowogo razmaha delaet wysokokristallicheskuü NMOS-strukturu sil'noj al'ternatiwoj dlq buduschih nanorazmernyh MOS-ustrojstw. Iz analiza takzhe mozhno sdelat' wywod, chto po mere umen'sheniq masshtaba ustrojstw porogowoe naprqzhenie snizhaetsq.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9786207053674\"\u003e\u003ch3\u003e\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Softcover - 9786207053674","offer_id":47530013589829,"sku":"9786207053674","price":43.9,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/b2d85036-f139-4e1d-8b20-2ea6e19b364f.jpg?v=1749532306","url":"https:\/\/shop.autorenwelt.de\/products\/mop-tranzistory-s-dialektrikom-high-k-sposobstwuut-tehnologicheskomu-progressu-von-acharq-puq","provider":"Autorenwelt Shop","version":"1.0","type":"link"}