{"product_id":"matching-properties-of-deep-sub-micron-mos-transistors-von-jeroen-a-croon-willy-sansen-hermann-e-maes-willy-m-sansen-herman-e-maes","title":"Matching Properties of Deep Sub-Micron MOS Transistors","description":"\n                                \n                \u003cp\u003e\n                                        \n                    \u003cstrong\u003eMatching Properties of Deep Sub-Micron MOS Transistors\u003c\/strong\u003e\n                                         examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction:\n                \n                \u003c\/p\u003e\n                                \n                \n                \u003cp\u003eA simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D\/A converter.\u003c\/p\u003e\n                                \n                \n                \u003cp\u003eThe most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. \u003c\/p\u003e\n                                \n                \n                \u003cp\u003eThe physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1\/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. \u003c\/p\u003e\n                                \n                \n                \u003cp\u003eThe impact of process parameters on the matching properties is discussed. \u003c\/p\u003e\n                                \n                \n                \u003cp\u003eThe impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. \u003c\/p\u003e\n                                \n                \n                \u003cp\u003e\n                                        \n                    \u003cstrong\u003eMatching Properties of Deep Sub-Micron MOS Transistors\u003c\/strong\u003e\n                                         is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.\n                \n                \u003c\/p\u003e\n                            \n            \u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9781441937186\"\u003e\u003ch3\u003e\u003c\/h3\u003e\u003c\/div\u003e","brand":"Libri","offers":[{"title":"Softcover - 9781441937186","offer_id":39415095918685,"sku":"9781441937186","price":160.49,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/1f22b1ec-e270-4bd5-a7db-b415440fb06a.jpg?v=1782360841","url":"https:\/\/shop.autorenwelt.de\/products\/matching-properties-of-deep-sub-micron-mos-transistors-von-jeroen-a-croon-willy-sansen-hermann-e-maes-willy-m-sansen-herman-e-maes","provider":"Autorenwelt Shop","version":"1.0","type":"link"}