{"product_id":"investigation-on-schottky-barrier-mosfets-for-memory-application-von-sung-jin-choi-und-yang-kyu-choi","title":"Investigation on Schottky-Barrier MOSFETs for Memory Application","description":"\u003cp\u003eThe structure of Schottky-barrier (SB) MOSFETs was  investigated for both the perspective of practical  applications and interest in novel Flash memory. We  demonstrated how the source-side injection of hot  electrons in the dopant-segregated SB (DSSB) Flash  memory cell achieves high-speed, low-voltage  programming with excellent injection efficiency, and  no constraints on the optimization of gate and drain  voltages. Moreover, the drain disturbance-free  phenomenon in NOR Flash architecture was achieved.  Excellent programming efficiency, especially, was  achieved in a DSSB Flash device with a narrow fin  width due to an enhanced lateral electric field  without any sacrifice of parasitic resistance. Thus,  the DSSB device can be a promising candidate in NOR  Flash memory for attaining a lower programming  voltage and power consumption.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783843377478\"\u003e\u003ch3\u003eSchottky-Barrier Flash Memory\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Softcover - 9783843377478","offer_id":39470082490461,"sku":"9783843377478","price":49.0,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/5ff2d765-3318-4557-a8be-5cc03ae37283.jpg?v=1769666953","url":"https:\/\/shop.autorenwelt.de\/products\/investigation-on-schottky-barrier-mosfets-for-memory-application-von-sung-jin-choi-und-yang-kyu-choi","provider":"Autorenwelt Shop","version":"1.0","type":"link"}