{"product_id":"indium-phosphide-hbt-in-thermally-optimized-periphery-for-applications-up-to-300-ghz-von-ksenia-nosaeva","title":"Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz","description":"\u003cp\u003eThis work describes the improvement in thermal management of InP double heterojunction bipolar transistors (DHBTs) fabricated with a transferred-substrate process. The availability of nanocrystalline CVD diamond-on-silicon (Si) handle substrates makes it possible to introduce a 10 µm diamond layer into the InP HBT MMIC stack with BCB-embedded transistors, passive elements and metal interconnects using an adhesive wafer-to-wafer bond process with subsequent removal of the Si host-substrate. Vertical thermal via connections through the diamond and BCB were created by applying inductively coupled plasma etching with oxygen plasma and electroplating.\u003c\/p\u003e\u003cp\u003e\u003c\/p\u003e\u003cp\u003eElectrical characterization of transistors after diamond transfer showed no degradation in RF characteristics and an improvement in DC behavior. A reduction in thermal resistance by 74% from 4.2 K\/mW to 1.1 K\/mW was observed, which to the author¿s knowledge is the lowest thermal resistance for 1-finger InP HBTs with 0.8×5 µm2 emitter area. Significant reduction of thermal resistance of multi-finger devices was achieved: from 4.1 K\/mW down to 0.7 K\/mW for 2-finger HBTs and from 1.53 K\/mW down to the recordly small 0.54 K\/mW for 3-finger devices.\u003c\/p\u003e\u003cp\u003e\u003c\/p\u003e\u003cp\u003eBased on the developed diamond heat spreader technology, the designed medium-power amplifier delivers a maximum output power of 20 dBm representing the improvement of 4 dBm. Moreover, stable operation of a high-power amplifier with maximum output power of 23 dBm was reached.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783736992870\"\u003e\u003ch3\u003e\u003c\/h3\u003e\u003c\/div\u003e","brand":"Libri","offers":[{"title":"Softcover - 9783736992870","offer_id":39443349143645,"sku":"9783736992870","price":42.0,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/33e58716-b64d-440c-ba8c-c8355e938887.jpg?v=1780463954","url":"https:\/\/shop.autorenwelt.de\/products\/indium-phosphide-hbt-in-thermally-optimized-periphery-for-applications-up-to-300-ghz-von-ksenia-nosaeva","provider":"Autorenwelt Shop","version":"1.0","type":"link"}