{"product_id":"implantation-effect-on-gase-single-crystal-von-orhan-karabulut","title":"Implantation Effect on GaSe Single Crystal","description":"\u003cp\u003eFor specific technological applications, it is very important to control the electrical properties which can be adjusted by doping process.  In general,  the doping  process is achieved  by  adding  the  dopants  directly  to  the  growth  ampoules .  It is quite hard to control the amount of impurity due to segregation and solubility problems.  The ion implantation technique is simply the launching  of atoms onto the surface of the material  by bombardment of the solid with energetic ions and does not render these difficulties. The main advantage of this technique is that the doping atoms can be implanted in different concentrations, independent of their solubility in the target materials. Therefore, the material properties can be controlled by using the implantation technique. In  this  work, the effect of N- and Si-implantation on structural, electrical and optical properties  of  GaSe single crystals were extensively  studied. This book is produced from my Ph.D thesis completed in the Middle East Technical University, Ankara, Turkey in 2003.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783659208454\"\u003e\u003ch3\u003eAn Experimental Study on N and Si Implanted GaSe\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Softcover - 9783659208454","offer_id":39487794937949,"sku":"9783659208454","price":49.0,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/da13d25c-ca3c-4e2f-9176-2c20c7900c3a.jpg?v=1757825183","url":"https:\/\/shop.autorenwelt.de\/products\/implantation-effect-on-gase-single-crystal-von-orhan-karabulut","provider":"Autorenwelt Shop","version":"1.0","type":"link"}