{"product_id":"defects-and-positron-states-in-compound-semiconductors-von-sandip-pan","title":"Defects and positron states in Compound Semiconductors","description":"\u003cp\u003eFour different application oriented III-V compound semiconductors have been selected for investigation using Positron annihilation spectroscopy (PAS) techniques. First one is Fe-doped semi-insulating Indium Phosphide. Positron annihilation lifetime spectroscopy (PALS) and Doppler broadening annihilation radiation (DBAR) measurements have been done in 140 MeV O(6+) ion implanted Fe-doped semi-insulating InP sample to observe irradiation induced defects formation and recovery of those defects with annealing temperature. Second, third \u0026amp; last samples are undoped Indium Antimonide, undoped Indium Phosphide \u0026amp; n-type Gallium Arsenide. PALS \u0026amp; DBAR measurements have been carried out in 40 MeV alpha irradiated undoped InSb, undoped InP and n-type GaAs samples to observe irradiation induced defects formation and recovery of those defects with annealing temperature respectively.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783659928383\"\u003e\u003ch3\u003e\u003c\/h3\u003e\u003c\/div\u003e","brand":"Libri","offers":[{"title":"Softcover - 9783659928383","offer_id":39450747830365,"sku":"9783659928383","price":55.9,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/6bb7aec7-ce42-4a3d-89e0-e8e4682bcba8.jpg?v=1758258637","url":"https:\/\/shop.autorenwelt.de\/products\/defects-and-positron-states-in-compound-semiconductors-von-sandip-pan","provider":"Autorenwelt Shop","version":"1.0","type":"link"}