{"product_id":"a-study-on-platinum-gold-schottky-contacts-to-n-type-indium-phosphide-von-nanda-kumar-reddy-nallabala","title":"A Study on Platinum\/Gold Schottky Contacts to n-type Indium Phosphide","description":"\u003cp\u003eIndium phosphide (InP) is an attractive III-V compound semiconductor for high speed metal-semiconductor field effect transistors (MESFETS) and optical devices. Due to certain attractive features of InP over GaAs, such as high electron mobility, better thermal conductivity, higher breakdown field have become a material of considerable interest for microwave and photonic applications in recent years. The III-V compound semiconductors have been investigated extensively during the past decade because of both fundamental and technological importance. Among them, InP is known to have a higher drift velocity which makes it as a material of strong potential use in high-frequency transistors, solar and photovoltaic cells and integrated optoelectronic devices. The choice of InP as a substrate for these devices originates from the fact that it has an optimum band gap for photovoltaic energy conversion and a large mobility required for high speed devices.In the present work, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au\/Pt\/n-type InP Schottky barrier diodes have been investigated in the temperature range 210-420 K.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783659451744\"\u003e\u003ch3\u003e\u003c\/h3\u003e\u003c\/div\u003e","brand":"Libri","offers":[{"title":"Softcover - 9783659451744","offer_id":39448673943645,"sku":"9783659451744","price":39.9,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/c5b6397b-2b53-4936-b98d-7d98c0dd9eed.jpg?v=1757654166","url":"https:\/\/shop.autorenwelt.de\/products\/a-study-on-platinum-gold-schottky-contacts-to-n-type-indium-phosphide-von-nanda-kumar-reddy-nallabala","provider":"Autorenwelt Shop","version":"1.0","type":"link"}