{"product_id":"the-source-drain-engineering-of-nanoscale-germanium-based-mos-devices-von-zhiqiang-li","title":"The Source\/Drain Engineering of Nanoscale Germanium-based MOS Devices","description":"This book mainly focuses on reducing the high parasitic resistance in the source\/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe\/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal\/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced  source\/drain parasitic resistance is demonstrated in the  fabricated Ge nMOSFET. Readers will find useful information about the source\/drain engineering technique for high-performance CMOS devices at future technology node.\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783662496817\"\u003e\u003ch3\u003e\u003c\/h3\u003e\u003c\/div\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783662570265\"\u003e\u003ch3\u003e\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Hardcover - 9783662496817","offer_id":39835405549661,"sku":"9783662496817","price":53.49,"currency_code":"EUR","in_stock":true},{"title":"Softcover - 9783662570265","offer_id":39626714054749,"sku":"9783662570265","price":53.49,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/75662b53-1a43-43eb-ba09-4b9680c586c0.jpg?v=1775886668","url":"https:\/\/shop.autorenwelt.de\/en\/products\/the-source-drain-engineering-of-nanoscale-germanium-based-mos-devices-von-zhiqiang-li","provider":"Autorenwelt Shop","version":"1.0","type":"link"}