{"product_id":"studies-on-structural-and-dielectric-properties-of-ss-ga2o3-thin-films-von-sang-a-lee","title":"Studies on structural and dielectric properties of ¿-Ga2O3 thin films","description":"\u003cp\u003eIn this study we report on structural and electric properties of ¿-Ga2O3 on Si and GaN substrates. Since Ga2O3 has a band-gap of 4.8 eV at room temperature and a dielectric constant of 10.2~14.2, Ga2O3 can be a potential candidate dielectrics for MIS devices. ¿-Ga2O3 has been deposited using various techniques such as radio-frequency sputtering, plasma enhanced atomic layer deposition (PEALD), and pulsed laser deposition (PLD). In particular, epitaxial Ga2O3 thin films grown on n-GaN\/Al2O3 substrate by PLD technique have a monoclinc ¿-Ga2O3 phase and peaks were indexed as (-2 0 1) and higher order diffractions. Optical transmittance of the epitaxial ¿-Ga2O3 film was more than 90% from UV to visible spectral regions and the optical band-gap of the ¿-Ga2O3 was calculated to be about 4.8 eV. Moreover, we have fabricated MFIS capacitors using Ga2O3 and Ba0.5Sr0.5TiO3 (BST) thin films on GaN\/Al2O3 substrate by pulsed laser deposition. The epitaxial growth, structural analysis, and dielectric properties of the Ga2O3 films and BST thin films will be discussed.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783659638916\"\u003e\u003ch3\u003e\u003c\/h3\u003e\u003c\/div\u003e","brand":"Libri","offers":[{"title":"Softcover - 9783659638916","offer_id":39449453723741,"sku":"9783659638916","price":61.9,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/d9a550a1-314b-4db0-ad2a-cc73f519fe84.jpg?v=1770447577","url":"https:\/\/shop.autorenwelt.de\/en\/products\/studies-on-structural-and-dielectric-properties-of-ss-ga2o3-thin-films-von-sang-a-lee","provider":"Autorenwelt Shop","version":"1.0","type":"link"}