{"product_id":"stability-of-igzo-based-thin-film-transistor-von-ken-hoshino-und-john-wager","title":"Stability of IGZO-based Thin-Film Transistor","description":"\u003cp\u003eAmorphous oxide semiconductors (AOSs) are of great current interest  for thin-film transistor (TFT) channel layer applications.  In particular,  indium gallium zinc oxide (IGZO) is under intense development for  commercial applications because of its demonstrated high performance  at low processing temperatures.  The objective of the research  presented in this book is to provide detailed assessments of device  stability, temperature dependence, and related phenomena for IGZO- based TFTs processed at temperatures between 200 °C and 300 °C.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783838399638\"\u003e\u003ch3\u003eStability and Temperature-Dependence Assessment of IGZO TFTs\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Softcover - 9783838399638","offer_id":39497034039389,"sku":"9783838399638","price":59.0,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/0b3ffa1d-8c19-41ab-bdbe-70b66055d02f.jpg?v=1781583563","url":"https:\/\/shop.autorenwelt.de\/en\/products\/stability-of-igzo-based-thin-film-transistor-von-ken-hoshino-und-john-wager","provider":"Autorenwelt Shop","version":"1.0","type":"link"}