{"product_id":"self-interstitial-diffusion-and-clustering-in-crystalline-si-von-salvo-mirabella","title":"SELF-INTERSTITIAL DIFFUSION AND CLUSTERING IN CRYSTALLINE Si","description":"\u003cp\u003eThis thesis is aimed to contribute to the present physical knowledge on native point defects in Si with our investigation on the diffusive properties of self-interstitials in crystalline silicon and on their interactions with some impurity species, such as carbon and boron atoms.  Self-interstitials detection is a quite difficult task, still they are involved in many phenomena, such as dopant diffusion, indirect observations of self-interstitials are more easily accessible. In our studies, we got advantages from the enhanced diffusion of boron realized by a supersaturation of self-interstitials. In particular, the broadening of very narrow B-doped (or B \"delta doped\") Si layers was widely used as a very sensitive marker for self-interstitials. Molecular beam epitaxy technique was extensively used to realize such B delta doped layers, about 3 nanometer wide. In addition, the same growing method was used also to produce different Si-sample structures, with various B and\/or C- doped regions, tailored on purpose to conduct specific experiments.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783838380230\"\u003e\u003ch3\u003eExperimental analysis of the interactions between the point defect and carbon or boron atoms\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Softcover - 9783838380230","offer_id":39469233111133,"sku":"9783838380230","price":79.0,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/6001f724-c4b1-4286-ac22-63fa4ac88f4e.jpg?v=1758175573","url":"https:\/\/shop.autorenwelt.de\/en\/products\/self-interstitial-diffusion-and-clustering-in-crystalline-si-von-salvo-mirabella","provider":"Autorenwelt Shop","version":"1.0","type":"link"}