{"product_id":"plasma-assisted-atomic-layer-deposition-of-iii-nitride-thin-films-von-cagla-ozgit-akgun","title":"Plasma-Assisted Atomic  Layer Deposition of  III-Nitride Thin Films","description":"\u003cp\u003eIII-nitride compound semiconductors (AlN, GaN, InN) and their alloys have emerged as versatile and high-performance materials for a wide range of electronic and optoelectronic device applications. Although high quality III-nitride thin films can be grown at high temperatures (\u0026gt;1000 °C) with significant rates, deposition of these films on temperature-sensitive device layers and substrates necessitates the adaptation of low-temperature methods such as atomic layer deposition (ALD). When compared to other low-temperature thin film deposition techniques, ALD stands out with its self-limiting growth mechanism, which enables the deposition of highly uniform and conformal thin films with sub-angstrom thickness control. These unique characteristics make ALD a powerful method especially for depositing films on nanostructured templates, as well as preparing alloy thin films with well-defined compositions. This monograph reports on the development of low-temperature (¿200 °C) plasma-assisted ALD processes for III-nitrides, and presents detailed characterization results for the deposited thin films and fabricated nanostructures.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783659208232\"\u003e\u003ch3\u003eGrowth and Characterization\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Softcover - 9783659208232","offer_id":39482499203165,"sku":"9783659208232","price":64.9,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/e39fc495-564a-4d8b-9c71-f16a57384272.jpg?v=1770447202","url":"https:\/\/shop.autorenwelt.de\/en\/products\/plasma-assisted-atomic-layer-deposition-of-iii-nitride-thin-films-von-cagla-ozgit-akgun","provider":"Autorenwelt Shop","version":"1.0","type":"link"}