{"product_id":"pamqt-sram-s-nizkim-urownem-utechki-von-debasis-mukherae","title":"Pamqt' SRAM s nizkim urownem utechki","description":"\u003cp\u003eYa predstawlqü nekotorye metody umen'sheniq rasseiwaniq utechki na zatworah i drugih älementah w pamqti SRAM glubokogo submikronnogo diapazona. V ätoj knige podrobno rassmatriwaütsq operacii SRAM. V knige takzhe rassmatriwaütsq razlichnye wnutrennie mehanizmy utechki tranzistorow, wklüchaq slabuü inwersiü, ponizhenie bar'era, wyzwannoe stokom, utechku stoka, wyzwannuü zatworom, i tunnelirowanie oxida zatwora. Nakonec, w knige rassmatriwaütsq razlichnye shemotehnicheskie priemy dlq snizheniq potreblqemoj moschnosti utechki. Koäfficienty W\/L rasschitywaütsq iz urawnenij toka w tranzistorah (linejnyj rezhim i rezhim nasyscheniq) dlq plawnoj operacii chteniq-zapisi kak 0, tak i 1. Ya ispol'zuü W1\/W3 = 1,5 i W4\/W6 = 1,5. Snachala q razrabotal obychnuü pamqt' SRAM i nablüdal za tokom utechki w razlichnyh tehnologiqh. Pri tehnologii 90 nm obychnaq SRAM pokazywaet tok utechki 1,87 nA w ustanowiwshemsq rezhime. Metod käsh-pamqti s uderzhaniem dannyh s zazemleniem (DGR-käsh) snizhaet tok utechki do 100 pA. Metod \"dremlüschego\" käsha snizhaet tok utechki do 84 pA.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9786205450673\"\u003e\u003ch3\u003eProektirowanie malomoschnoj wysokoproizwoditel'noj SRAM Pamqt' s ispol'zowaniem umen'sheniq utechki cherez zatwor Tehnika\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Softcover - 9786205450673","offer_id":40829091315805,"sku":"9786205450673","price":19.8,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/d92bf000-ce07-41aa-a896-a10a6d2ff124.png?v=1758432241","url":"https:\/\/shop.autorenwelt.de\/en\/products\/pamqt-sram-s-nizkim-urownem-utechki-von-debasis-mukherae","provider":"Autorenwelt Shop","version":"1.0","type":"link"}