{"product_id":"ion-implantation-into-gan-and-alinn-von-abdul-majid","title":"Ion implantation into GaN and AlInN","description":"\u003cp\u003eA detailed and systematic study of ion implanted MOCVD grown wurtzite  gallium nitride (GaN) and aluminum indium nitride (AlInN) is conducted. As-grown  samples were characterized using XRD and Hall measurements to check the structural  and electrical properties of the samples. Neon (Ne), manganese (Mn) and cerium (Ce)  ions were implanted into the materials with different doses in ranges 1014¿9x1015,  1014¿5x1016 and 3x1014¿2x1015cm-2 respectively. Using rapid thermal annealing (RTA)  furnace implanted GaN samples were annealed at 800, 850, 900 and 1000oC and  implanted AlInN samples were annealed at 750 and 850 oC for lattice recovery and  activation of the dopants. Structural and optical characterizations were made using  Rutherford backscattering spectroscopy (RBS), X-Ray diffraction (XRD),  Photoluminescence (PL), Optical transmission and Raman scattering spectroscopy.  Moreover, magnetic characterization of Mn and Ce implanted samples was also carried  out with vibrating sample magnetometer (VSM) and superconducting quantum  interference device (SQUID).\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783845474991\"\u003e\u003ch3\u003eAn experimental study of ion implanted MOCVD grown Ga and AlIn nitrides\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Softcover - 9783845474991","offer_id":39493520523357,"sku":"9783845474991","price":68.0,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/fe4fefc9-93ed-4aa8-b1de-8e8107ff1c85.jpg?v=1757655247","url":"https:\/\/shop.autorenwelt.de\/en\/products\/ion-implantation-into-gan-and-alinn-von-abdul-majid","provider":"Autorenwelt Shop","version":"1.0","type":"link"}